PART |
Description |
Maker |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SA1802 E000561 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
2SC307205 2SC3072 2SC3072-05 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
2SC4683 |
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SC468105 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
2SA116007 2SA1160 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
2SA1300 2SA130007 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
2SA1802 |
Transistor Silicon PNP Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
GT5G13106 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
GT25G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|